Magnetic Properties of Gadolinium - Doped Amorphous Silicon Films

نویسندگان

  • C. Rettori
  • A. R. Zanatta
چکیده

Electron spin resonance (ESR) and dc-magnetization experiments have been performed in Gd-doped amorphous (a-)silicon lms. The lms were deposited by the cosputtering technique following di erent conditions rendering samples with varying Gd and hydrogen concentrations. In addition to lms with di erent contents of impurities and, in order to probe the in uence of the atomic structure on the magnetic properties of the Gd species, the lms were also submitted to laser-induced crystallization processing. Both ESR and dc-magnetization results show that Gd is incorporated as a trivalent ion (Gd) in the Si host. ESR data indicate a strong dependence between the Gd concentration and the density of Si dangling bonds. Moreover, the Gd local environment is nearly insensitive to the Gd and H content, as well as to the atomic structure of the Si host. Along with gadolinium, other rare-earth species have been investigated and the main results are discussed.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Se p 20 02 Magnetic properties of a - Si films doped with rare - earth elements

Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR), dc-magnetization, ion beam analysis, optical transmission, and Raman spectroscopy. For comparison the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rar...

متن کامل

Visible and 1.54 μm Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanis...

متن کامل

Se p 20 02 Neutral - dangling bond depletion in a - SiN films caused by magnetic rare - earth elements

Amorphous silicon-nitrogen thin films doped with rare-earth elements (aSiN:RE; RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR). It was found that the neutral dangling-bond density [D] of a-SiN films decreases with the presence of magnetic REs and the drop of [D] approximately scales with the spin a...

متن کامل

Infrared probe of metal-insulator transition in Si1−xGdx and Si1−xYx amorphous alloys in magnetic field

– Carrier dynamics in amorphous a-Si1−xREx (RE = Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region ( ω < 1 eV) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hoppin...

متن کامل

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002